CEB12N5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CEB12N5
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 166 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25.6 nS
Cossⓘ - Capacitancia de salida: 205 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.54 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de CEB12N5 MOSFET
CEB12N5 Datasheet (PDF)
cep12n5 ceb12n5 cef12n5.pdf

CEP12N5/CEB12N5 CEF12N5PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP12N5 500V 0.54 12A 10VCEB12N5 500V 0.54 12A 10VCEF12N5 500V 0.54 12A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIES
cep12n6 ceb12n6 cef12n6.pdf

CEP12N6/CEB12N6 CEF12N6PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP12N6 600V 0.65 12A 10VCEB12N6 600V 0.65 12A 10VCEF12N6 600V 0.65 12A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIES
cep12n65 ceb12n65 cef12n65.pdf

CEP12N65/CEB12N65CEF12N65PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP12N65 650V 0.73 12A 10VCEB12N65 650V 0.73 12A 10VCEF12N65 650V 0.73 12A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES C
cep12p10 ceb12p10.pdf

CEP12P10/CEB12P10P-Channel Enhancement Mode Field Effect TransistorFEATURES-100V, -11A, RDS(ON) =315m @VGS = -10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Otros transistores... CEP13N10L , CEB13N10 , CEP13N10 , CEB14N5 , CEF14N5 , CEP14N5 , CEB13N5 , CEP13N5 , K2611 , CEF12N5 , CEF13N5 , CEP12N5 , CEB12N6 , CEF12N6 , CEP12N6 , CEP10N4 , CEB10N4 .
History: NVMFS5C673N
History: NVMFS5C673N



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