All MOSFET. CEB12N5 Datasheet

 

CEB12N5 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CEB12N5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 166 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 44.1 nC
   trⓘ - Rise Time: 25.6 nS
   Cossⓘ - Output Capacitance: 205 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.54 Ohm
   Package: TO263

 CEB12N5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEB12N5 Datasheet (PDF)

 ..1. Size:396K  cet
 cep12n5 ceb12n5 cef12n5.pdf

CEB12N5 CEB12N5

CEP12N5/CEB12N5 CEF12N5PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP12N5 500V 0.54 12A 10VCEB12N5 500V 0.54 12A 10VCEF12N5 500V 0.54 12A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIES

 8.1. Size:411K  cet
 cep12n6 ceb12n6 cef12n6.pdf

CEB12N5 CEB12N5

CEP12N6/CEB12N6 CEF12N6PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP12N6 600V 0.65 12A 10VCEB12N6 600V 0.65 12A 10VCEF12N6 600V 0.65 12A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIES

 8.2. Size:386K  cet
 cep12n65 ceb12n65 cef12n65.pdf

CEB12N5 CEB12N5

CEP12N65/CEB12N65CEF12N65PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP12N65 650V 0.73 12A 10VCEB12N65 650V 0.73 12A 10VCEF12N65 650V 0.73 12A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES C

 9.1. Size:126K  cet
 cep12p10 ceb12p10.pdf

CEB12N5 CEB12N5

CEP12P10/CEB12P10P-Channel Enhancement Mode Field Effect TransistorFEATURES-100V, -11A, RDS(ON) =315m @VGS = -10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 3SK38A

 

 
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