CEB12N6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CEB12N6
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 250 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 58 nS
Cossⓘ - Capacitancia de salida: 220 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de CEB12N6 MOSFET
CEB12N6 Datasheet (PDF)
cep12n6 ceb12n6 cef12n6.pdf

CEP12N6/CEB12N6 CEF12N6PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP12N6 600V 0.65 12A 10VCEB12N6 600V 0.65 12A 10VCEF12N6 600V 0.65 12A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIES
cep12n65 ceb12n65 cef12n65.pdf

CEP12N65/CEB12N65CEF12N65PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP12N65 650V 0.73 12A 10VCEB12N65 650V 0.73 12A 10VCEF12N65 650V 0.73 12A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES C
cep12n5 ceb12n5 cef12n5.pdf

CEP12N5/CEB12N5 CEF12N5PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP12N5 500V 0.54 12A 10VCEB12N5 500V 0.54 12A 10VCEF12N5 500V 0.54 12A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIES
cep12p10 ceb12p10.pdf

CEP12P10/CEB12P10P-Channel Enhancement Mode Field Effect TransistorFEATURES-100V, -11A, RDS(ON) =315m @VGS = -10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Otros transistores... CEF14N5 , CEP14N5 , CEB13N5 , CEP13N5 , CEB12N5 , CEF12N5 , CEF13N5 , CEP12N5 , NCEP15T14 , CEF12N6 , CEP12N6 , CEP10N4 , CEB10N4 , CEI10N4 , CEF10N4 , CEB10N6 , CEF10N6 .



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
irf9530 datasheet | mj21194 | oc71 transistor | 2n3440 | bc550c | 2n3904 transistor datasheet | p75nf75 | d880 transistor