CEB12N6 Specs and Replacement

Type Designator: CEB12N6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 58 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm

Package: TO263

CEB12N6 substitution

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CEB12N6 datasheet

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 cep12n6 ceb12n6 cef12n6.pdf pdf_icon

CEB12N6

CEP12N6/CEB12N6 CEF12N6 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP12N6 600V 0.65 12A 10V CEB12N6 600V 0.65 12A 10V CEF12N6 600V 0.65 12A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES ... See More ⇒

 0.1. Size:386K  cet
 cep12n65 ceb12n65 cef12n65.pdf pdf_icon

CEB12N6

CEP12N65/CEB12N65 CEF12N65 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP12N65 650V 0.73 12A 10V CEB12N65 650V 0.73 12A 10V CEF12N65 650V 0.73 12A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES C... See More ⇒

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 cep12n5 ceb12n5 cef12n5.pdf pdf_icon

CEB12N6

CEP12N5/CEB12N5 CEF12N5 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP12N5 500V 0.54 12A 10V CEB12N5 500V 0.54 12A 10V CEF12N5 500V 0.54 12A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES ... See More ⇒

 9.1. Size:126K  cet
 cep12p10 ceb12p10.pdf pdf_icon

CEB12N6

CEP12P10/CEB12P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -11A, RDS(ON) =315m @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted... See More ⇒

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Detailed specifications: CEF14N5, CEP14N5, CEB13N5, CEP13N5, CEB12N5, CEF12N5, CEF13N5, CEP12N5, IRF1405, CEF12N6, CEP12N6, CEP10N4, CEB10N4, CEI10N4, CEF10N4, CEB10N6, CEF10N6

Keywords - CEB12N6 MOSFET specs

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 CEB12N6 replacement

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