CEP3060 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CEP3060
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 105 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 320 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
   Paquete / Cubierta: TO220

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CEP3060 Datasheet (PDF)

..1. Size:408K cet
cep3060 ceb3060.pdf

CEP3060/CEB3060N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 105A,RDS(ON) = 6m @VGS = 10V. RDS(ON) = 8m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).DHigh power and current handing capability.Lead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 25

0.1. Size:332K ncepower
ncep3060eq.pdf

Pb Free Producthttp://www.ncepower.com NCEP3060EQNCE N-Channel Super Trench Power MOSFET Description The NCEP3060EQ uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

8.1. Size:506K ncepower
ncep3065qu.pdf

http://www.ncepower.com NCEP3065QUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP3065QU uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switchi

8.2. Size:510K ncepower
ncep3065bqu.pdf

http://www.ncepower.com NCEP3065BQUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP3065BQU uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switc

Otros transistores... CEB6056 , CEB6060L , CEB6060N , CEB6086L , CEB60N06G , CEB60N10 , CEB6186 , CEP21A2 , STP75NF75 , CEP30N15L , CEP3100 , CEP3120 , CEP3205 , CEP4060A , CEP4060AL , CEP45N10 , CEP50N10 .

History: FCP104N60

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