CEP3060 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

CEP3060 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEP3060

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 105 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 320 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm

Encapsulados: TO220

Búsqueda de reemplazo de CEP3060 MOSFET

- Selecciónⓘ de transistores por parámetros

CEP3060 datasheet

..1. Size:408K cet
cep3060 ceb3060.pdf pdf_icon

CEP3060/CEB3060 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 105A,RDS(ON) = 6m @VGS = 10V. RDS(ON) = 8m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25

0.1. Size:332K ncepower
ncep3060eq.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCEP3060EQ NCE N-Channel Super Trench Power MOSFET Description The NCEP3060EQ uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

8.1. Size:506K ncepower
ncep3065qu.pdf pdf_icon

http //www.ncepower.com NCEP3065QU NCE N-Channel Super Trench Power MOSFET Description The NCEP3065QU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switchi

8.2. Size:510K ncepower
ncep3065bqu.pdf pdf_icon

http //www.ncepower.com NCEP3065BQU NCE N-Channel Super Trench Power MOSFET Description The NCEP3065BQU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switc

Otros transistores... CEB6056, CEB6060L, CEB6060N, CEB6086L, CEB60N06G, CEB60N10, CEB6186, CEP21A2, 8205A, CEP30N15L, CEP3100, CEP3120, CEP3205, CEP4060A, CEP4060AL, CEP45N10, CEP50N10

CEP3060 Todos los transistores