Справочник MOSFET. CEP3060

 

CEP3060 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CEP3060
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 105 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 15.8 nC
   trⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 320 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
   Тип корпуса: TO220

 Аналог (замена) для CEP3060

 

 

CEP3060 Datasheet (PDF)

 ..1. Size:408K  cet
 cep3060 ceb3060.pdf

CEP3060 CEP3060

CEP3060/CEB3060N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 105A,RDS(ON) = 6m @VGS = 10V. RDS(ON) = 8m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).DHigh power and current handing capability.Lead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 25

 0.1. Size:332K  ncepower
 ncep3060eq.pdf

CEP3060 CEP3060

Pb Free Producthttp://www.ncepower.com NCEP3060EQNCE N-Channel Super Trench Power MOSFET Description The NCEP3060EQ uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 8.1. Size:506K  ncepower
 ncep3065qu.pdf

CEP3060 CEP3060

http://www.ncepower.com NCEP3065QUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP3065QU uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switchi

 8.2. Size:510K  ncepower
 ncep3065bqu.pdf

CEP3060 CEP3060

http://www.ncepower.com NCEP3065BQUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP3065BQU uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switc

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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