CEP50N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CEP50N10
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 136 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 49 nC
   trⓘ - Tiempo de subida: 19 nS
   Cossⓘ - Capacitancia de salida: 300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
   Paquete / Cubierta: TO220

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CEP50N10 Datasheet (PDF)

..1. Size:446K cet
cep50n10 ceb50n10.pdf

CEP50N10/CEB50N10N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 50A, RDS(ON) = 30m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

8.1. Size:370K cet
cep50n06 ceb50n06.pdf

CEP50N06/CEB50N06N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 50A ,RDS(ON) = 17m (typ) @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise no

9.1. Size:128K cet
cep50p03 ceb50p03.pdf

CEP50P03/CEB50P03P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -47A, RDS(ON) =20m @VGS = -10V.RDS(ON) =32m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc

9.2. Size:344K ncepower
ncep50p80ak.pdf

http://www.ncepower.com NCEP50P80AKNCE P-Channel Super Trench Power MOSFET Description The NCEP50P80AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

9.3. Size:312K ncepower
ncep50p80.pdf

http://www.ncepower.com NCEP50P80NCE P-Channel Super Trench Power MOSFET Description The NCEP50P80 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch

9.4. Size:339K ncepower
ncep50p80a.pdf

http://www.ncepower.com NCEP50P80ANCE P-Channel Super Trench Power MOSFET Description The NCEP50P80A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

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