CEP50N10 Todos los transistores

 

CEP50N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CEP50N10
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 136 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 19 nS
   Cossⓘ - Capacitancia de salida: 300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
   Paquete / Cubierta: TO220
 

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CEP50N10 Datasheet (PDF)

 ..1. Size:446K  cet
 cep50n10 ceb50n10.pdf pdf_icon

CEP50N10

CEP50N10/CEB50N10N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 50A, RDS(ON) = 30m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

 8.1. Size:370K  cet
 cep50n06 ceb50n06.pdf pdf_icon

CEP50N10

CEP50N06/CEB50N06N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 50A ,RDS(ON) = 17m (typ) @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise no

 9.1. Size:128K  cet
 cep50p03 ceb50p03.pdf pdf_icon

CEP50N10

CEP50P03/CEB50P03P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -47A, RDS(ON) =20m @VGS = -10V.RDS(ON) =32m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc

 9.2. Size:344K  ncepower
 ncep50p80ak.pdf pdf_icon

CEP50N10

http://www.ncepower.com NCEP50P80AKNCE P-Channel Super Trench Power MOSFET Description The NCEP50P80AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

MOSTRAR MÁS

Otros transistores... CEP3060 , CEP30N15L , CEP3100 , CEP3120 , CEP3205 , CEP4060A , CEP4060AL , CEP45N10 , K4145 , CEP540L , CEP540N , CEP6036 , CEP6042 , CEP6056 , CEP6060L , CEP6060N , CEP6086 .

History: VS3640DE | SSF2316E

 

 
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