CEP50N10 Specs and Replacement

Type Designator: CEP50N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: TO220

CEP50N10 substitution

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CEP50N10 datasheet

 ..1. Size:446K  cet
 cep50n10 ceb50n10.pdf pdf_icon

CEP50N10

CEP50N10/CEB50N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 50A, RDS(ON) = 30m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted ... See More ⇒

 8.1. Size:370K  cet
 cep50n06 ceb50n06.pdf pdf_icon

CEP50N10

CEP50N06/CEB50N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 50A ,RDS(ON) = 17m (typ) @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise no... See More ⇒

 9.1. Size:128K  cet
 cep50p03 ceb50p03.pdf pdf_icon

CEP50N10

CEP50P03/CEB50P03 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -47A, RDS(ON) =20m @VGS = -10V. RDS(ON) =32m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc ... See More ⇒

 9.2. Size:344K  ncepower
 ncep50p80ak.pdf pdf_icon

CEP50N10

http //www.ncepower.com NCEP50P80AK NCE P-Channel Super Trench Power MOSFET Description The NCEP50P80AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw... See More ⇒

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Detailed specifications: CEP3060, CEP30N15L, CEP3100, CEP3120, CEP3205, CEP4060A, CEP4060AL, CEP45N10, 2N7002, CEP540L, CEP540N, CEP6036, CEP6042, CEP6056, CEP6060L, CEP6060N, CEP6086

Keywords - CEP50N10 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.