CEP6036 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CEP6036
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 167 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 135 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 138 nC
trⓘ - Tiempo de subida: 23 nS
Cossⓘ - Capacitancia de salida: 450 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0046 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET CEP6036
CEP6036 Datasheet (PDF)
cep6036 ceb6036.pdf
CEP6036/CEB6036N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES60V, 135A, RDS(ON) = 4.6m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless ot
cep6030l ceb6030l.pdf
CEP6030L/CEB6030LN-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 52A,RDS(ON) = 13.5m @VGS = 10V. RDS(ON) = 20m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc
ncep6035aqu.pdf
http://www.ncepower.com NCEP6035AQUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP6035AQU uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high V =60V,I =35ADS Dfrequency switching performance. Both conduction and R =10.0m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to an extremely low
ncep6035ag.pdf
http://www.ncepower.com NCEP6035AGNCE N-Channel Super Trench Power MOSFET Description The NCEP6035AG uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =60V,ID =35A frequency switching performance. Both conduction and RDS(ON)=9.8m (typical) @ VGS=10V switching power losses are minimized due to an extremely low RDS
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
