CEP6056 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CEP6056
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 375 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0062 Ohm
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de MOSFET CEP6056

CEP6056 Datasheet (PDF)

..1. Size:629K cet
cep6056 ceb6056.pdf

CEP6056/CEB6056N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 100A, RDS(ON) = 6.2m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedPa

8.1. Size:556K ncepower
ncep6050qu.pdf

http://www.ncepower.com NCEP6050QUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP6050QU uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high V =60V,I =50ADS Dfrequency switching performance. Both conduction and R =6.5m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to an extremely lowc

8.2. Size:648K ncepower
ncep6055gu.pdf

http://www.ncepower.com NCEP6055GUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP6055GU uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high V =60V,I =55ADS Dfrequency switching performance. Both conduction and R =6.5m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to an extremely lowc

8.3. Size:630K ncepower
ncep6050aqu.pdf

http://www.ncepower.com NCEP6050AQUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP6050AQU uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high V =60V,I =50ADS Dfrequency switching performance. Both conduction and R =6.5m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to an extremely low

8.4. Size:1005K ncepower
ncep6055agu.pdf

http://www.ncepower.com NCEP6055AGUNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP6055AGU uses Super Trench technology that is V =60V,I =55ADS Duniquely optimized to provide the most efficient high frequencyR =6.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =7.7m (typical) @ V =4.5VDS(ON) GSl

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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