CEP6056/CEB6056N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 100A, RDS(ON) = 6.2m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedPa

http://www.ncepower.com NCEP6050QUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP6050QU uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high V =60V,I =50ADS Dfrequency switching performance. Both conduction and R =6.5m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to an extremely lowc

http://www.ncepower.com NCEP6055GUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP6055GU uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high V =60V,I =55ADS Dfrequency switching performance. Both conduction and R =6.5m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to an extremely lowc

http://www.ncepower.com NCEP6050AQUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP6050AQU uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high V =60V,I =50ADS Dfrequency switching performance. Both conduction and R =6.5m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to an extremely low

http://www.ncepower.com NCEP6055AGUNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP6055AGU uses Super Trench technology that is V =60V,I =55ADS Duniquely optimized to provide the most efficient high frequencyR =6.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =7.7m (typical) @ V =4.5VDS(ON) GSl