CEP6056. Аналоги и основные параметры
Наименование производителя: CEP6056
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 100 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 15 ns
Cossⓘ - Выходная емкость: 375 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0062 Ohm
Тип корпуса: TO220
Аналог (замена) для CEP6056
- подборⓘ MOSFET транзистора по параметрам
CEP6056 даташит
cep6056 ceb6056.pdf
CEP6056/CEB6056 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 100A, RDS(ON) = 6.2m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Pa
ncep6050qu.pdf
http //www.ncepower.com NCEP6050QU NCE N-Channel Super Trench Power MOSFET Description The NCEP6050QU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high V =60V,I =50A DS D frequency switching performance. Both conduction and R =6.5m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to an extremely low c
ncep6055gu.pdf
http //www.ncepower.com NCEP6055GU NCE N-Channel Super Trench Power MOSFET Description The NCEP6055GU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high V =60V,I =55A DS D frequency switching performance. Both conduction and R =6.5m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to an extremely low c
ncep6050aqu.pdf
http //www.ncepower.com NCEP6050AQU NCE N-Channel Super Trench Power MOSFET Description The NCEP6050AQU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high V =60V,I =50A DS D frequency switching performance. Both conduction and R =6.5m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to an extremely low
Другие IGBT... CEP4060A, CEP4060AL, CEP45N10, CEP50N10, CEP540L, CEP540N, CEP6036, CEP6042, K3569, CEP6060L, CEP6060N, CEP6086, CEP6086L, CEP60N06G, CEP60N10, CEP6186, CEF630N
History: CEB75A3
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