CEP6060N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CEP6060N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 88 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 42 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 310 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de MOSFET CEP6060N

CEP6060N Datasheet (PDF)

..1. Size:420K cet
cep6060n ceb6060n.pdf

CEP6060N/CEB6060NN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 42A, RDS(ON) = 25m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedPa

7.1. Size:399K cet
cep6060l ceb6060l.pdf

CEP6060L/CEB6060LN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 52.4A,RDS(ON) = 21m @VGS = 10V. RDS(ON) = 25m @VGS = 5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability. DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc =

7.2. Size:669K ncepower
ncep6060agu.pdf

http://www.ncepower.comNCEP6060AGUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP6060AGU uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency swit

7.3. Size:688K ncepower
ncep6060gu.pdf

http://www.ncepower.com NCEP6060GUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP6060GU uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high V =60V,I =60ADS Dfrequency switching performance. Both conduction and R =5.6m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to an extremely low

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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