Справочник MOSFET. CEP6060N

 

CEP6060N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CEP6060N
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 88 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 42 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 28.7 nC
   trⓘ - Время нарастания: 3 ns
   Cossⓘ - Выходная емкость: 310 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.025 Ohm
   Тип корпуса: TO220

 Аналог (замена) для CEP6060N

 

 

CEP6060N Datasheet (PDF)

 ..1. Size:420K  cet
 cep6060n ceb6060n.pdf

CEP6060N CEP6060N

CEP6060N/CEB6060NN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 42A, RDS(ON) = 25m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedPa

 7.1. Size:399K  cet
 cep6060l ceb6060l.pdf

CEP6060N CEP6060N

CEP6060L/CEB6060LN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 52.4A,RDS(ON) = 21m @VGS = 10V. RDS(ON) = 25m @VGS = 5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability. DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc =

 7.2. Size:669K  ncepower
 ncep6060agu.pdf

CEP6060N CEP6060N

http://www.ncepower.comNCEP6060AGUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP6060AGU uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency swit

 7.3. Size:688K  ncepower
 ncep6060gu.pdf

CEP6060N CEP6060N

http://www.ncepower.com NCEP6060GUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP6060GU uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high V =60V,I =60ADS Dfrequency switching performance. Both conduction and R =5.6m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to an extremely low

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: AO4712

 

 
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