CEP60N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

CEP60N10/CEB60N10N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 57A, RDS(ON) = 24m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

CEP60N06G/CEB60N06GN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 60A, RDS(ON) = 16m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

http://www.ncepower.com NCEP60ND30AGNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP60ND30AG uses Super Trench technology that is VDS =60V,ID =30A uniquely optimized to provide the most efficient high RDS(ON)=12m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=15m (typical) @ VGS=4.5V switching power losses are

http://www.ncepower.com NCEP60ND60GNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP60ND60G uses Super Trench technology that is V =60V,I =55ADS Duniquely optimized to provide the most efficient highR =7.8m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and Excellent gate charge x R product(FOM)DS(on)switchi