CEP60N10 Specs and Replacement

Type Designator: CEP60N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 57 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 440 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: TO220

CEP60N10 substitution

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CEP60N10 datasheet

 ..1. Size:381K  cet
 cep60n10 ceb60n10.pdf pdf_icon

CEP60N10

CEP60N10/CEB60N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 57A, RDS(ON) = 24m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted ... See More ⇒

 8.1. Size:609K  cet
 cep60n06g ceb60n06g.pdf pdf_icon

CEP60N10

CEP60N06G/CEB60N06G N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 60A, RDS(ON) = 16m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted ... See More ⇒

 8.2. Size:310K  ncepower
 ncep60nd30ag.pdf pdf_icon

CEP60N10

http //www.ncepower.com NCEP60ND30AG NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP60ND30AG uses Super Trench technology that is VDS =60V,ID =30A uniquely optimized to provide the most efficient high RDS(ON)=12m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=15m (typical) @ VGS=4.5V switching power losses are ... See More ⇒

 8.3. Size:602K  ncepower
 ncep60nd60g.pdf pdf_icon

CEP60N10

http //www.ncepower.com NCEP60ND60G NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP60ND60G uses Super Trench technology that is V =60V,I =55A DS D uniquely optimized to provide the most efficient high R =7.8m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and Excellent gate charge x R product(FOM) DS(on) switchi... See More ⇒

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Detailed specifications: CEP6036, CEP6042, CEP6056, CEP6060L, CEP6060N, CEP6086, CEP6086L, CEP60N06G, 13N50, CEP6186, CEF630N, CEF730G, CEF740A, CEF740G, CEF80N15, CEF830G, CEF840A

Keywords - CEP60N10 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.