CEB75N06G MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

CEB75N06G datasheet

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CEP75N06G/CEB75N06G N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 75A, RDS(ON) = 13m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise no

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cep75n06 ceb75n06.pdf pdf_icon

CEP75N06/CEB75N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 87A, RDS(ON) = 12m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Pa

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cep75n10 ceb75n10.pdf pdf_icon

CEP75N10/CEB75N10 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 72A, RDS(ON) = 15m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherw

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cep75a3 ceb75a3.pdf pdf_icon

CEP75A3/CEB75A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 69A, RDS(ON) = 9m @VGS = 10V. RDS(ON) = 13m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-263 & TO-220 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 2

Otros transistores... CEF85N75 , CEB630N , CEB730G , CEB73A3G , CEB740A , CEB740G , CEB75A3 , CEB75N06 , 2SK3568 , CEB75N10 , CEB80N15 , CEB830G , CEB83A3 , CEB83A3G , CEB840A , CEB840G , CEB840L .