CEB84A4 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEB84A4

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 71 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 90 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 385 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0051 Ohm

Encapsulados: TO263

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CEB84A4 datasheet

 ..1. Size:393K  cet
 cep84a4 ceb84a4.pdf pdf_icon

CEB84A4

CEP84A4/CEB84A4 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 90A, RDS(ON) = 5.1m @VGS = 10V. RDS(ON) = 7.8m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE MAXIMUM RATINGS Tc

 9.1. Size:435K  cet
 cep840a ceb840a cef840a.pdf pdf_icon

CEB84A4

CEP840A/CEB840A CEF840A PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP840A 500V 0.85 8.5A 10V CEB840A 500V 0.85 8.5A 10V CEF840A 500V 0.85 8.5A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF

 9.2. Size:396K  cet
 cep840l ceb840l cef840l.pdf pdf_icon

CEB84A4

CEP840L/CEB840L CEF840L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP840L 500V 0.8 8A 10V CEB840L 500V 0.8 8A 10V CEF840L 500V 0.8 8A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(

 9.3. Size:398K  cet
 cep840g ceb840g cef840g.pdf pdf_icon

CEB84A4

CEP840G/CEB840G CEF840G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP840G 500V 0.85 8A 10V CEB840G 500V 0.85 8A 10V CEF840G 500V 0.85 8A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-2

MOSTRAR MÁS

Otros transistores... CEB75N10, CEB80N15, CEB830G, CEB83A3, CEB83A3G, CEB840A, CEB840G, CEB840L, IRF2807, CEB85A3, CEB85N75, CEB85N75V, CEB9060N, CEP630N, CEP730G, CEP73A3G, CEP740A