CEP85N75
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CEP85N75
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 200
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 75
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30
V
|Id|ⓘ - Corriente continua de drenaje: 86
A
Tjⓘ - Temperatura máxima de unión: 175
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9
nS
Cossⓘ - Capacitancia
de salida: 715
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012
Ohm
Paquete / Cubierta:
TO220
- Selección de transistores por parámetros
CEP85N75
Datasheet (PDF)
..1. Size:434K cet
cep85n75 ceb85n75 cef85n75.pdf 
CEP85N75/CEB85N75CEF85N75N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP85N75 75V 12m 86A 10VCEB85N75 75V 12m 86A 10VCEF85N75 75V 12m 86A e 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.TO-220 & TO-263 package & TO-220F full-pak for through
0.1. Size:435K cet
cep85n75v ceb85n75v.pdf 
CEP85N75V/CEB85N75VN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES75V, 85A, RDS(ON) = 12m @VGS = 12V. RDS(ON) = 13m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK)TO-220SABSOLUTE
9.1. Size:451K cet
cep85a3 ceb85a3.pdf 
CEP85A3/CEB85A3N-Channel Enhancement Mode Field Effect TransistorFEATURES25V, 90A, RDS(ON) = 6m @VGS = 10V. RDS(ON) = 9m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-263 & TO-220 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 25
9.2. Size:912K ncepower
ncep85t15d.pdf 
http://www.ncepower.com NCEP85T15DNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP85T15D uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switchi
9.3. Size:330K ncepower
ncep8588.pdf 
Pb Free Producthttp://www.ncepower.com NCEP8588NCE N-Channel Super Trench Power MOSFET Description The NCEP8588 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high
9.4. Size:323K ncepower
ncep85t16d.pdf 
Pb Free Producthttp://www.ncepower.com NCEP85T16DNCE N-Channel Super Trench Power MOSFET Description The NCEP85T16D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
9.5. Size:1128K ncepower
ncep85t25vd.pdf 
http://www.ncepower.com NCEP85T25VDNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP85T25VD uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switc
9.6. Size:323K ncepower
ncep85t12.pdf 
Pb Free Producthttp://www.ncepower.com NCEP85T12NCE N-Channel Super Trench Power MOSFET Description The NCEP85T12 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
9.7. Size:333K ncepower
ncep85t30ll.pdf 
NCEP85T30LLNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP85T30LL uses Super Trench technology that is VDS =85V,ID =330A uniquely optimized to provide the most efficient high RDS(ON)=1.6m , typical @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(FOM) switching power losses are min
9.8. Size:753K ncepower
ncep85t25.pdf 
Pb Free Producthttp://www.ncepower.comNCEP85T25NCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP85T25 uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-f
9.9. Size:347K ncepower
ncep85t12d.pdf 
Pb Free Producthttp://www.ncepower.com NCEP85T12DNCE N-Channel Super Trench Power MOSFET Description The NCEP85T12D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
9.10. Size:385K ncepower
ncep85t14.pdf 
Pb Free Producthttp://www.ncepower.com NCEP85T14NCE N-Channel Super Trench Power MOSFET Description The NCEP85T14 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
9.11. Size:296K ncepower
ncep85t25d.pdf 
Pb Free Producthttp://www.ncepower.com NCEP85T25DNCE N-Channel Super Trench Power MOSFET Description The NCEP85T25D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
9.12. Size:345K ncepower
ncep85t16.pdf 
Pb Free Producthttp://www.ncepower.com NCEP85T16NCE N-Channel Super Trench Power MOSFET Description The NCEP85T16 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
9.13. Size:352K ncepower
ncep85t30t.pdf 
http://www.ncepower.com NCEP85T30TNCE N-Channel Super Trench Power MOSFET Description The NCEP85T30T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
9.14. Size:365K ncepower
ncep85t10g.pdf 
http://www.ncepower.com NCEP85T10GNCE N-Channel Super Trench Power MOSFET Description The NCEP85T10G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit
9.15. Size:298K ncepower
ncep85t25t.pdf 
Pb Free Producthttp://www.ncepower.com NCEP85T25TNCE N-Channel Super Trench Power MOSFET Description The NCEP85T25T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
9.16. Size:313K ncepower
ncep85t35t.pdf 
Pb Free Producthttp://www.ncepower.com NCEP85T35TNCE N-Channel Super Trench Power MOSFET Description The NCEP85T35T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
9.17. Size:385K ncepower
ncep85t11.pdf 
Pb Free Producthttp://www.ncepower.com NCEP85T11NCE N-Channel Super Trench Power MOSFET Description The NCEP85T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
9.18. Size:342K ncepower
ncep85t15.pdf 
Pb Free Producthttp://www.ncepower.com NCEP85T15NCE N-Channel Super Trench Power MOSFET Description The NCEP85T15 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high
9.19. Size:355K ncepower
ncep85t14d.pdf 
Pb Free Producthttp://www.ncepower.com NCEP85T14DNCE N-Channel Super Trench Power MOSFET Description The NCEP85T14D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
Otros transistores... CEP830G
, CEP83A3
, CEP83A3G
, CEP840A
, CEP840G
, CEP840L
, CEP84A4
, CEP85A3
, CEP83A3
, CEP85N75V
, CEP9060N
, CEP93A3
, CEBF634
, CEBF640
, CED01N65
, CED01N65A
, CED01N6G
.
History: IXTP50N28T
| 3SK249