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CED02N65G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CED02N65G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 1.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 75 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5.5 Ohm
   Paquete / Cubierta: TO251
 

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CED02N65G Datasheet (PDF)

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 ceu02n65g ced02n65g.pdf pdf_icon

CED02N65G

CED02N65G/CEU02N65GN-Channel Enhancement Mode Field Effect TransistorFEATURES650V, 1.8A, RDS(ON) = 5.5 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless

 6.1. Size:416K  cet
 ceu02n65a ced02n65a.pdf pdf_icon

CED02N65G

CED02N65A/CEU02N65AN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES650V, 1.2A, RDS(ON) = 10.5 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.GDGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS Tc

 7.1. Size:417K  cet
 ceu02n6g ced02n6g.pdf pdf_icon

CED02N65G

CED02N6G/CEU02N6GN-Channel Enhancement Mode Field Effect TransistorFEATURES600V, 2A, RDS(ON) = 5 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherw

 7.2. Size:379K  cet
 ceu02n6a ced02n6a.pdf pdf_icon

CED02N65G

CED02N6A/CEU02N6AN-Channel Enhancement Mode Field Effect TransistorFEATURES600V, 1.3A, RDS(ON) = 8.5 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.GDGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS Tc = 25 C unless o

MOSTRAR MÁS

Otros transistores... CEP93A3 , CEBF634 , CEBF640 , CED01N65 , CED01N65A , CED01N6G , CED01N7 , CED02N65A , IRF540N , CED02N6A , CED02N6G , CED02N7G , CED02N7G-1 , CED02N9 , CED03N8 , CED04N6 , CED04N65 .

History: STW19NM50N | STW15NK50Z | FM6L52020L | CEP540N | CEB60N10 | CEM9407A | CEB16N10

 

 
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