CED02N7G-1 Todos los transistores

 

CED02N7G-1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CED02N7G-1

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 48 W

Tensión drenaje-fuente (Vds): 720 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 1.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 12.5 nS

Conductancia de drenaje-sustrato (Cd): 55 pF

Resistencia drenaje-fuente RDS(on): 6.75 Ohm

Empaquetado / Estuche: TO251

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CED02N7G-1 Datasheet (PDF)

1.1. ceu02n7g-1 ced02n7g-1.pdf Size:666K _cet

CED02N7G-1
CED02N7G-1

CED02N7G-1/CEU02N7G-1 N-Channel Enhancement Mode Field Effect Transistor FEATURES 720V, 1.6A, RDS(ON) = 6.75? @VGS = 10V. 750V@Tc=150 C Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc

2.1. ceu02n7g ced02n7g.pdf Size:397K _cet

CED02N7G-1
CED02N7G-1

CED02N7G/CEU02N7G N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V, 1.6A, RDS(ON) = 6.75? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherw

 4.1. ceu02n65g ced02n65g.pdf Size:417K _cet

CED02N7G-1
CED02N7G-1

CED02N65G/CEU02N65G N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 1.8A, RDS(ON) = 5.5? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless other

4.2. ceu02n6a ced02n6a.pdf Size:379K _cet

CED02N7G-1
CED02N7G-1

CED02N6A/CEU02N6A N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1.3A, RDS(ON) = 8.5? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherw

 4.3. ceu02n9 ced02n9.pdf Size:414K _cet

CED02N7G-1
CED02N7G-1

CED02N9/CEU02N9 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 900V, 2A, RDS(ON) = 6.8? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless

4.4. ceu02n6g ced02n6g.pdf Size:417K _cet

CED02N7G-1
CED02N7G-1

CED02N6G/CEU02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 2A, RDS(ON) = 5? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise n

 4.5. ceu02n65a ced02n65a.pdf Size:416K _cet

CED02N7G-1
CED02N7G-1

CED02N65A/CEU02N65A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 1.2A, RDS(ON) = 10.5? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25

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