CED02N7G-1
MOSFET. Datasheet pdf. Equivalent
Type Designator: CED02N7G-1
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 48
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 720
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 1.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 9
nC
trⓘ - Rise Time: 12.5
nS
Cossⓘ -
Output Capacitance: 55
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 6.75
Ohm
Package:
TO251
CED02N7G-1
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CED02N7G-1
Datasheet (PDF)
..1. Size:666K cet
ceu02n7g-1 ced02n7g-1.pdf 
CED02N7G-1/CEU02N7G-1N-Channel Enhancement Mode Field Effect TransistorFEATURES720V, 1.6A, RDS(ON) = 6.75 @VGS = 10V.750V@Tc=150 C Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATING
6.1. Size:397K cet
ceu02n7g ced02n7g.pdf
CED02N7G/CEU02N7GN-Channel Enhancement Mode Field Effect TransistorFEATURES700V, 1.6A, RDS(ON) = 6.75 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless o
8.1. Size:417K cet
ceu02n65g ced02n65g.pdf
CED02N65G/CEU02N65GN-Channel Enhancement Mode Field Effect TransistorFEATURES650V, 1.8A, RDS(ON) = 5.5 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless
8.2. Size:416K cet
ceu02n65a ced02n65a.pdf
CED02N65A/CEU02N65AN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES650V, 1.2A, RDS(ON) = 10.5 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.GDGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS Tc
8.3. Size:417K cet
ceu02n6g ced02n6g.pdf
CED02N6G/CEU02N6GN-Channel Enhancement Mode Field Effect TransistorFEATURES600V, 2A, RDS(ON) = 5 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherw
8.4. Size:414K cet
ceu02n9 ced02n9.pdf
CED02N9/CEU02N9N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES900V, 2A, RDS(ON) = 6.8 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C u
8.5. Size:379K cet
ceu02n6a ced02n6a.pdf
CED02N6A/CEU02N6AN-Channel Enhancement Mode Field Effect TransistorFEATURES600V, 1.3A, RDS(ON) = 8.5 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.GDGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS Tc = 25 C unless o
Datasheet: IRFP360LC
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