CEU01N7 Todos los transistores

 

CEU01N7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CEU01N7
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 0.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 45 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 18 Ohm
   Paquete / Cubierta: TO252

 Búsqueda de reemplazo de MOSFET CEU01N7

 

CEU01N7 Datasheet (PDF)

 ..1. Size:415K  cet
ced01n7 ceu01n7.pdf pdf_icon

CEU01N7

CED01N7/CEU01N7 N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V, 0.8A, RDS(ON) = 18 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless othe

 8.1. Size:393K  cet
ceu01n65a ced01n65a.pdf pdf_icon

CEU01N7

CED01N65A/CEU01N65A N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.9A, RDS(ON) = 15 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless

 8.2. Size:395K  cet
ceu01n65 ced01n65.pdf pdf_icon

CEU01N7

CED01N65/CEU01N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 1.2A, RDS(ON) = 10.5 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc =

 8.3. Size:408K  cet
ced01n6g ceu01n6g.pdf pdf_icon

CEU01N7

CED01N6G/CEU01N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1A, RDS(ON) = 9.3 @VGS = 10V. High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D G D G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source

Otros transistores... CED14G04 , CEFF634 , CEFF640 , CEPF634 , CEPF640 , CEU01N65 , CEU01N65A , CEU01N6G , AON7408 , CEU02N65A , CEU02N65G , CEU02N6A , CEU02N6G , CEU02N7G , CEU02N7G-1 , CEU02N9 , CEU03N8 .

 

 
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