CEU02N7G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CEU02N7G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 48 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 1.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12.5 nS
Cossⓘ - Capacitancia de salida: 55 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 6.75 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de CEU02N7G MOSFET
CEU02N7G Datasheet (PDF)
ceu02n7g ced02n7g.pdf

CED02N7G/CEU02N7GN-Channel Enhancement Mode Field Effect TransistorFEATURES700V, 1.6A, RDS(ON) = 6.75 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless o
ceu02n7g-1 ced02n7g-1.pdf

CED02N7G-1/CEU02N7G-1N-Channel Enhancement Mode Field Effect TransistorFEATURES720V, 1.6A, RDS(ON) = 6.75 @VGS = 10V.750V@Tc=150 C Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATING
ceu02n65g ced02n65g.pdf

CED02N65G/CEU02N65GN-Channel Enhancement Mode Field Effect TransistorFEATURES650V, 1.8A, RDS(ON) = 5.5 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless
ceu02n65a ced02n65a.pdf

CED02N65A/CEU02N65AN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES650V, 1.2A, RDS(ON) = 10.5 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.GDGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS Tc
Otros transistores... CEU01N65 , CEU01N65A , CEU01N6G , CEU01N7 , CEU02N65A , CEU02N65G , CEU02N6A , CEU02N6G , IRF4905 , CEU02N7G-1 , CEU02N9 , CEU03N8 , CEU04N6 , CEU04N65 , CEU04N7G , CEU05N65 , CEU06N7 .
History: IXTH1N170DHV | 2N7002BKV | SIE848DF | AP5600N | 2SK3092 | HM2015DN03Q | 2SK1727
History: IXTH1N170DHV | 2N7002BKV | SIE848DF | AP5600N | 2SK3092 | HM2015DN03Q | 2SK1727



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