All MOSFET. CEU02N7G Datasheet

 

CEU02N7G Datasheet and Replacement


   Type Designator: CEU02N7G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 1.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12.5 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 6.75 Ohm
   Package: TO252
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CEU02N7G Datasheet (PDF)

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 ceu02n7g ced02n7g.pdf pdf_icon

CEU02N7G

CED02N7G/CEU02N7GN-Channel Enhancement Mode Field Effect TransistorFEATURES700V, 1.6A, RDS(ON) = 6.75 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless o

 0.1. Size:666K  cet
 ceu02n7g-1 ced02n7g-1.pdf pdf_icon

CEU02N7G

CED02N7G-1/CEU02N7G-1N-Channel Enhancement Mode Field Effect TransistorFEATURES720V, 1.6A, RDS(ON) = 6.75 @VGS = 10V.750V@Tc=150 C Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATING

 8.1. Size:417K  cet
 ceu02n65g ced02n65g.pdf pdf_icon

CEU02N7G

CED02N65G/CEU02N65GN-Channel Enhancement Mode Field Effect TransistorFEATURES650V, 1.8A, RDS(ON) = 5.5 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless

 8.2. Size:416K  cet
 ceu02n65a ced02n65a.pdf pdf_icon

CEU02N7G

CED02N65A/CEU02N65AN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES650V, 1.2A, RDS(ON) = 10.5 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.GDGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS Tc

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Keywords - CEU02N7G MOSFET datasheet

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