CED3120 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CED3120

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 33 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 36 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 215 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm

Encapsulados: TO251

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CED3120 datasheet

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 ced3120 ceu3120.pdf pdf_icon

CED3120

CED3120/CEU3120 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 36A , RDS(ON) = 15m @VGS = 10V. RDS(ON) = 22m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMU

 ..2. Size:409K  cet
 ceu3120 ced3120.pdf pdf_icon

CED3120

CED3120/CEU3120 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 36A , RDS(ON) = 15m @VGS = 10V. RDS(ON) = 22m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMU

 9.1. Size:414K  cet
 ceu3172 ced3172.pdf pdf_icon

CED3120

CED3172/CEU3172 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 36A, RDS(ON) = 20m @VGS = 10V. RDS(ON) = 32m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM

 9.2. Size:408K  cet
 ceu3100 ced3100.pdf pdf_icon

CED3120

CED3100/CEU3100 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 51A , RDS(ON) = 10m @VGS = 10V. RDS(ON) = 17m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABS

MOSTRAR MÁS

Otros transistores... CEU12N10L, CEU14G04, CED16N10, CED16N10L, CED21A2, CED25N15L, CED3060, CED3100, STP80NF70, CED3172, CED3252, CED4060A, CED4060AL, CED40N10, CED4204, CED540L, CED540N