CED3172 Todos los transistores

 

CED3172 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CED3172
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 36 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 205 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: TO251

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CED3172 Datasheet (PDF)

 ..1. Size:414K  cet
ceu3172 ced3172.pdf

CED3172
CED3172

CED3172/CEU3172N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 36A, RDS(ON) = 20m @VGS = 10V. RDS(ON) = 32m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).DHigh power and current handing capability.Lead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM

 9.1. Size:409K  cet
ced3120 ceu3120.pdf

CED3172
CED3172

CED3120/CEU3120N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 36A , RDS(ON) = 15m @VGS = 10V. RDS(ON) = 22m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMU

 9.2. Size:409K  cet
ceu3120 ced3120.pdf

CED3172
CED3172

CED3120/CEU3120N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 36A , RDS(ON) = 15m @VGS = 10V. RDS(ON) = 22m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMU

 9.3. Size:408K  cet
ceu3100 ced3100.pdf

CED3172
CED3172

CED3100/CEU3100N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES30V, 51A , RDS(ON) = 10m @VGS = 10V. RDS(ON) = 17m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABS

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History: STD2N80K5

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