FDD5680 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDD5680
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 38 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 33 nC
   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 210 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.021 Ohm
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de MOSFET FDD5680

FDD5680 Datasheet (PDF)

..1. Size:91K fairchild semi
fdd5680.pdf

July 2000FDD5680N-Channel, PowerTrench MOSFETFeaturesGeneral DescriptionThis N-Channel MOSFET is produced using Fairchild 38 A, 60 V. RDS(on) = 0.021 @ VGS = 10 VSemiconductor's advanced PowerTrench process that hasRDS(on) = 0.025 @ VGS = 6 V.been especially tailored to minimize the on-stateresistance and yet maintain low gate charge for superior Low gate

9.1. Size:101K fairchild semi
fdd5614p.pdf

May 2005 FDD5614P 60V P-Channel PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchilds high 15 A, 60 V. RDS(ON) = 100 m @ VGS = 10 V voltage PowerTrench process. It has been optimized RDS(ON) = 130 m @ VGS = 4.5 V for power management applications. Fast switching speed Applications High performance tren

9.2. Size:213K fairchild semi
fdd5670.pdf

December 2009FDD567060V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 52 A, 60 V RDS(ON) = 15 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 18 m @ VGS = 6 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low

9.3. Size:80K fairchild semi
fdd5612.pdf

March 2001 FDD5612 60V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designedFeatures specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional 18 A, 60 V. RDS(ON) = 55 m @ VGS = 10 V switching PWM controllers. RDS(ON) = 64 m @ VGS = 6 V These MOSFETs feature fas

9.4. Size:170K fairchild semi
fdd5690.pdf

December 2002FDD569060V N-Channel PowerTrench MOSFET General Description FeaturesThis N-Channel MOSFET has been designed specifically 30 A, 60 V. RDS(ON) = 0.027 @ VGS = 10 Vto improve the overall efficiency of DC/DC converters using RDS(ON) = 0.032 @ VGS = 6 V.either synchronous or conventional switching PWMcontrollers. Low gate charge (23nC typical).These

9.5. Size:515K onsemi
fdd5614p.pdf

FDD5614P 60V P-Channel PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses ON Semiconductors 15 A, 60 V. RDS(ON) = 100 m @ VGS = 10 Vhigh voltage PowerTrench process. It has been optimized RDS(ON) = 130 m @ VGS = 4.5 V for power management applications. Fast switching speedApplications High performance trench tech

9.6. Size:225K onsemi
fdd5670.pdf

FDD567060V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 52 A, 60 V RDS(ON) = 15 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 18 m @ VGS = 6 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low gate chargelow gate

9.7. Size:423K onsemi
fdd5690.pdf

FDD569060V N-Channel PowerTrench MOSFET General Description FeaturesThis N-Channel MOSFET has been designed specifically 30 A, 60 V. RDS(ON) = 0.027 @ VGS = 10 Vto improve the overall efficiency of DC/DC converters using RDS(ON) = 0.032 @ VGS = 6 V.either synchronous or conventional switching PWMcontrollers. Low gate charge (23nC typical).These MOSFETs feature

9.8. Size:870K cn vbsemi
fdd5614p.pdf

FDD5614Pwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Symb

9.9. Size:827K cn vbsemi
fdd5670.pdf

FDD5670www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit Un

Otros transistores... FDC640P , FDC6506P , FDC653N , FDC654P , FDC655AN , FDC6561AN , FDC658P , FDD5202P , 7N60 , FDD5690 , FDD6030L , FDD6612A , FDD6670A , FDD6680 , FDD6680A , FDD6690A , AS3402 .

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