All MOSFET. FDD5680 Datasheet

 

FDD5680 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDD5680

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 60 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 38 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 1835 pF

Maximum Drain-Source On-State Resistance (Rds): 0.021 Ohm

Package: DPAK

FDD5680 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDD5680 Datasheet (PDF)

1.1. fdd5680.pdf Size:91K _fairchild_semi

FDD5680
FDD5680

July 2000 FDD5680 N-Channel, PowerTrench? MOSFET Features General Description This N-Channel MOSFET is produced using Fairchild • 38 A, 60 V. RDS(on) = 0.021 ? @ VGS = 10 V Semiconductor's advanced PowerTrench process that has RDS(on) = 0.025 ? @ VGS = 6 V. been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior • Low gate charge (33nC

5.1. fdd5614p.pdf Size:101K _fairchild_semi

FDD5680
FDD5680

May 2005 FDD5614P 60V P-Channel PowerTrench® MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high • –15 A, –60 V. RDS(ON) = 100 m? @ VGS = –10 V voltage PowerTrench process. It has been optimized RDS(ON) = 130 m? @ VGS = –4.5 V for power management applications. • Fast switching speed Applications • High performance trench technology for extrem

5.2. fdd5670.pdf Size:213K _fairchild_semi

FDD5680
FDD5680

December 2009 FDD5670 ? ? ? 60V N-Channel PowerTrench? MOSFET General Description Features This N-Channel MOSFET has been designed • 52 A, 60 V RDS(ON) = 15 m? @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 18 m? @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for • Low gate charge low ga

5.3. fdd5612.pdf Size:80K _fairchild_semi

FDD5680
FDD5680

March 2001 FDD5612 ? ? ? 60V N-Channel PowerTrench? MOSFET General Description This N-Channel MOSFET has been designed Features specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional • 18 A, 60 V. RDS(ON) = 55 m? @ VGS = 10 V switching PWM controllers. RDS(ON) = 64 m? @ VGS = 6 V These MOSFETs feature faster switching and

5.4. fdd5690.pdf Size:170K _fairchild_semi

FDD5680
FDD5680

December 2002 FDD5690 60V N-Channel PowerTrench® MOSFET General Description Features This N-Channel MOSFET has been designed specifically • 30 A, 60 V. RDS(ON) = 0.027? @ VGS = 10 V to improve the overall efficiency of DC/DC converters using RDS(ON) = 0.032 ? @ VGS = 6 V. either synchronous or conventional switching PWM controllers. • Low gate charge (23nC typical). These MOSFETs feat

Datasheet: FDC640P , FDC6506P , FDC653N , FDC654P , FDC655AN , FDC6561AN , FDC658P , FDD5202P , IRFZ44A , FDD5690 , FDD6030L , FDD6612A , FDD6670A , FDD6680 , FDD6680A , FDD6690A , FDF0610 .

 


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