CED6060N Todos los transistores

 

CED6060N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CED6060N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 62.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 34 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 310 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: TO251
 

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CED6060N Datasheet (PDF)

 ..1. Size:420K  cet
 ceu6060n ced6060n.pdf pdf_icon

CED6060N

CED6060N/CEU6060NN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 34A, RDS(ON) = 25m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.DTO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless othe

 9.1. Size:410K  cet
 ceu6086 ced6086.pdf pdf_icon

CED6060N

CED6086/CEU6086N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 50A, RDS(ON) = 8.7m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired. DTO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherw

 9.2. Size:360K  cet
 ced6042.pdf pdf_icon

CED6060N

CED6042/CEU6042N-Channel Enhancement Mode Field Effect TransistorPRELIMINARYFEATURES60V, 90A , RDS(ON) = 5m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.DTO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc =

 9.3. Size:410K  cet
 ceu6056 ced6056.pdf pdf_icon

CED6060N

CED6056/CEU6056N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 76A , RDS(ON) = 6.2m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.DTO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless othe

MOSTRAR MÁS

Otros transistores... CED4060A , CED4060AL , CED40N10 , CED4204 , CED540L , CED540N , CED55N10 , CED6056 , IRF2807 , CED6086 , CED6186 , CED630N , CED6336 , CED6426 , CED655 , CED730G , CEU16N10 .

History: PMR370XN | IPP80N08S2-07 | MPVD4N70F | 7NM70L-TF3T-T | IPP12CN10NG | CMPDM7120G | IPP120N06NG

 

 
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