CEU4204 Todos los transistores

 

CEU4204 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEU4204

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 29 W

Tensión drenaje-fuente (Vds): 40 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 24 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 3 nS

Conductancia de drenaje-sustrato (Cd): 90 pF

Resistencia drenaje-fuente RDS(on): 0.028 Ohm

Empaquetado / Estuche: TO252

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CEU4204 Datasheet (PDF)

1.1. ceu4204 ced4204.pdf Size:405K _cet

CEU4204
CEU4204

CED4204/CEU4204 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 24A, RDS(ON) = 28m? @VGS = 10V. RDS(ON) = 42m? @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATING

4.1. ced4201 ceu4201.pdf Size:416K _cet

CEU4204
CEU4204

CED4201/CEU4201 P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -28A, RDS(ON) = 26m? @VGS = -10V. RDS(ON) = 36m? @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RA

 5.1. ceu4269.pdf Size:584K _cet

CEU4204
CEU4204

CEU4269 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES D1/D2 40V , 14A , RDS(ON) = 32m? @VGS = 10V. RDS(ON) = 46m? @VGS = 4.5V. -40V , -12A , RDS(ON) = 45m? @VGS = 10V. RDS(ON) = 65m? @VGS = 4.5V. G1 G2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. S1 S2 D1/D2 Lead free product is acquired. S1 G1 TO-25

5.2. ceu4279 ced4279.pdf Size:680K _cet

CEU4204
CEU4204

CED4279/CEU4279 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES D1/D2 40V , 14A , RDS(ON) = 32m? @VGS = 10V. RDS(ON) = 46m? @VGS = 4.5V. -40V , -9A , RDS(ON) = 72m? @VGS = 10V. RDS(ON) = 110m? @VGS = 4.5V. G1 G2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. S1 S2 D1/D2 Lead free product is acquired. S1 G

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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