CEP12N65 Todos los transistores

 

CEP12N65 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEP12N65

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 250 W

Tensión drenaje-fuente (Vds): 650 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 12 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 39 nC

Tiempo de elevación (tr): 76 nS

Conductancia de drenaje-sustrato (Cd): 210 pF

Resistencia drenaje-fuente RDS(on): 0.73 Ohm

Empaquetado / Estuche: TO220

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CEP12N65 Datasheet (PDF)

1.1. cep12n65 ceb12n65 cef12n65.pdf Size:386K _cet

CEP12N65
CEP12N65

CEP12N65/CEB12N65 CEF12N65 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP12N65 650V 0.73? 12A 10V CEB12N65 650V 0.73? 12A 10V CEF12N65 650V 0.73? 12A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERIES

3.1. cep12n6 ceb12n6 cef12n6.pdf Size:411K _cet

CEP12N65
CEP12N65

CEP12N6/CEB12N6 CEF12N6 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP12N6 600V 0.65? 12A 10V CEB12N6 600V 0.65? 12A 10V CEF12N6 600V 0.65? 12A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(D

 4.1. cep12n5 ceb12n5 cef12n5.pdf Size:396K _cet

CEP12N65
CEP12N65

CEP12N5/CEB12N5 CEF12N5 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP12N5 500V 0.54? 12A 10V CEB12N5 500V 0.54? 12A 10V CEF12N5 500V 0.54? 12A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(D

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