All MOSFET. CEP12N65 Datasheet

 

CEP12N65 Datasheet and Replacement


   Type Designator: CEP12N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 76 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.73 Ohm
   Package: TO220
 

 CEP12N65 substitution

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CEP12N65 Datasheet (PDF)

 ..1. Size:386K  cet
cep12n65 ceb12n65 cef12n65.pdf pdf_icon

CEP12N65

CEP12N65/CEB12N65CEF12N65PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP12N65 650V 0.73 12A 10VCEB12N65 650V 0.73 12A 10VCEF12N65 650V 0.73 12A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES C

 7.1. Size:411K  cet
cep12n6 ceb12n6 cef12n6.pdf pdf_icon

CEP12N65

CEP12N6/CEB12N6 CEF12N6PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP12N6 600V 0.65 12A 10VCEB12N6 600V 0.65 12A 10VCEF12N6 600V 0.65 12A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIES

 8.1. Size:396K  cet
cep12n5 ceb12n5 cef12n5.pdf pdf_icon

CEP12N65

CEP12N5/CEB12N5 CEF12N5PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP12N5 500V 0.54 12A 10VCEB12N5 500V 0.54 12A 10VCEF12N5 500V 0.54 12A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIES

 8.2. Size:319K  ncepower
ncep12n10aq.pdf pdf_icon

CEP12N65

NCEP12N10AQhttp://www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP12N10AQ uses Super Trench II technology that is VDS =100V,ID =46A uniquely optimized to provide the most efficient high frequency RDS(ON)=12.1m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=15.8m (typical) @ VGS=4.5V

Datasheet: CEF10N65 , CEF12N65 , CEH8205 , CEM2539 , CEM73A3G , CEZ3R03 , CEM7808 , CEP10N65 , 5N65 , CES2336 , CEM3128 , CEM3138 , CEM3172 , CEM3178 , CEM3252 , CEM3252L , CEM3254 .

Keywords - CEP12N65 MOSFET datasheet

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