CEM3178 Todos los transistores

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CEM3178 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEM3178

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 7.6 A

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 4 nS

Conductancia de drenaje-sustrato (Cd): 125 pF

Resistencia drenaje-fuente RDS(on): 0.022 Ohm

Empaquetado / Estuche: SO8

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CEM3178 Datasheet (PDF)

1.1. cem3178.pdf Size:378K _cet

CEM3178
CEM3178

CEM3178 PRELIMINARY Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 7.6A, RDS(ON) = 22m? @VGS = 10V. RDS(ON) = 33m? @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D1 D1 D2 D2 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25

4.1. cem3172.pdf Size:385K _cet

CEM3178
CEM3178

CEM3172 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 8.9A, RDS(ON) = 20m? @VGS = 10V. RDS(ON) = 32m? @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted

5.1. cem3138.pdf Size:505K _cet

CEM3178
CEM3178

CEM3138 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V, 9.1A, RDS(ON) = 15m? @VGS = 10V. RDS(ON) = 21m? @VGS = 4.5V. 30V, 6.9A, RDS(ON) = 26m? @VGS = 10V. RDS(ON) = 35m? @VGS = 4.5V. D1 D1 D2 D2 Super high dense cell design for extremely low RDS(ON). 8 7 6 5 High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8

5.2. cem3128.pdf Size:246K _cet

CEM3178
CEM3178

CEM3128 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V, 9A, RDS(ON) = 16m? @VGS = 10V. RDS(ON) = 23m? @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 S1 G1 S2 G2 1 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless ot

5.3. cem3109.pdf Size:615K _cet

CEM3178
CEM3178

CEM3109 Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY FEATURES 30V, 10A, RDS(ON) = 14m? @VGS = 10V. RDS(ON) = 20m? @VGS = 4.5V. -30V, -8A, RDS(ON) = 20m? @VGS = -10V. RDS(ON) = 30m? @VGS = -4.5V. D1 D1 D2 D2 Super high dense cell design for extremely low RDS(ON). 8 7 6 5 High power and current handing capability. Lead free product is acquired. Surface mo

5.4. cem3120.pdf Size:387K _cet

CEM3178
CEM3178

CEM3120 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 10A, RDS(ON) = 15m? @VGS = 10V. RDS(ON) = 22m? @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted

Otros transistores... CEZ3R03 , CEM7808 , CEP10N65 , CEP12N65 , CES2336 , CEM3128 , CEM3138 , CEM3172 , IRFP260N , CEM3252 , CEM3252L , CEM3254 , CEM3258 , CEM3259 , CEM4042 , CEM4204 , CEM4228 .

 


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