CEM3178 - Даташиты. Аналоги. Основные параметры

CEM3178 PRELIMINARY Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 7.6A, RDS(ON) = 22m @VGS = 10V. RDS(ON) = 33m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D1 D1 D2 D2 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS T

CEM3172 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 8.9A, RDS(ON) = 20m @VGS = 10V. RDS(ON) = 32m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwis

CEM3138 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V, 9.1A, RDS(ON) = 15m @VGS = 10V. RDS(ON) = 21m @VGS = 4.5V. 30V, 6.9A, RDS(ON) = 26m @VGS = 10V. RDS(ON) = 35m @VGS = 4.5V. D1 D1 D2 D2 Super high dense cell design for extremely low RDS(ON). 8 7 6 5 High power and current handing capability. Lead free product is acquired. Surface mount Pac

CEM3109 Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY FEATURES 30V, 10A, RDS(ON) = 14m @VGS = 10V. RDS(ON) = 20m @VGS = 4.5V. -30V, -8A, RDS(ON) = 20m @VGS = -10V. RDS(ON) = 30m @VGS = -4.5V. D1 D1 D2 D2 Super high dense cell design for extremely low RDS(ON). 8 7 6 5 High power and current handing capability. Lead free product is acquired.

CEM3120 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 10A, RDS(ON) = 15m @VGS = 10V. RDS(ON) = 22m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise

CEM3128 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 9A, RDS(ON) = 16m @VGS = 10V. RDS(ON) = 23m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 S1 G1 S2 G2 1 ABSOLUTE MAXIMUM RATINGS TA = 25 C unles

CEM3128 www.VBsemi.tw Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg Tested 0.016 at VGS = 10 V 8.5 100 % UIS Tested 30 7.1 Compliant to RoHS Directive 2002/95/EC 0.020 at VGS = 4.5 V 7.6 APPLICATIONS Notebook System Power Low Current DC/DC D 1 D 2 SO-8 S D