CEM3252L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEM3252L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 130 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.029 Ohm

Encapsulados: SO8

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CEM3252L datasheet

 ..1. Size:342K  cet
 cem3252l.pdf pdf_icon

CEM3252L

CEM3252L N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V, 8A, RDS(ON) = 29m @VGS = 10V. RDS(ON) = 36m @VGS = 4.5V. RDS(ON) = 55m @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). D D D D High power and current handing capability. 8 7 6 5 Lead free product is acquired. Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM

 7.1. Size:390K  cet
 cem3252.pdf pdf_icon

CEM3252L

CEM3252 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 7.5A, RDS(ON) = 28m @VGS = 10V. RDS(ON) = 40m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwis

 7.2. Size:877K  cn vbsemi
 cem3252.pdf pdf_icon

CEM3252L

CEM3252 www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO-

 8.1. Size:610K  cet
 cem3259.pdf pdf_icon

CEM3252L

CEM3259 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 5 30V, 7.6A, RDS(ON) = 22m @VGS = 10V. RDS(ON) = 33m @VGS = 4.5V. -30V, -5.9A, RDS(ON) = 36m @VGS = -10V. RDS(ON) = 52m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2 8 7 6 5 High power and current handing capability. Lead free product is acquired. Surfac

MOSTRAR MÁS

Otros transistores... CEP10N65, CEP12N65, CES2336, CEM3128, CEM3138, CEM3172, CEM3178, CEM3252, 20N50, CEM3254, CEM3258, CEM3259, CEM4042, CEM4204, CEM4228, CEM4269, CEM4279