All MOSFET. CEM3252L Datasheet

 

CEM3252L MOSFET. Datasheet pdf. Equivalent


   Type Designator: CEM3252L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.2 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: SO8

 CEM3252L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEM3252L Datasheet (PDF)

 ..1. Size:342K  cet
 cem3252l.pdf

CEM3252L CEM3252L

CEM3252LN-Channel Enhancement Mode Field Effect TransistorFEATURES530V, 8A, RDS(ON) = 29m @VGS = 10V. RDS(ON) = 36m @VGS = 4.5V. RDS(ON) = 55m @VGS = 2.5V.Super high dense cell design for extremely low RDS(ON).D D D DHigh power and current handing capability.8 7 6 5Lead free product is acquired.Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM

 7.1. Size:390K  cet
 cem3252.pdf

CEM3252L CEM3252L

CEM3252N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 7.5A, RDS(ON) = 28m @VGS = 10V. RDS(ON) = 40m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwis

 7.2. Size:877K  cn vbsemi
 cem3252.pdf

CEM3252L CEM3252L

CEM3252www.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO-

 8.1. Size:610K  cet
 cem3259.pdf

CEM3252L CEM3252L

CEM3259Dual Enhancement Mode Field Effect Transistor (N and P Channel)FEATURES530V, 7.6A, RDS(ON) = 22m @VGS = 10V. RDS(ON) = 33m @VGS = 4.5V.-30V, -5.9A, RDS(ON) = 36m @VGS = -10V. RDS(ON) = 52m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D28 7 6 5High power and current handing capability.Lead free product is acquired.Surfac

 8.2. Size:408K  cet
 cem3254.pdf

CEM3252L CEM3252L

CEM3254N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES30V ,7.8A, RDS(ON) = 28m @VGS = 10V. RDS(ON) = 40m @VGS = 4.5V.D D D DSuper high dense cell design for extremely low RDS(ON).8 7 6 5High power and current handing capability.Lead-free plating ; RoHS compliant.Surface mount Package.1 2 3 4 S S S GSO-81ABSOLUTE MAXIMUM RATINGS TA = 25

 8.3. Size:301K  cet
 cem3258.pdf

CEM3252L CEM3252L

CEM3258Dual N-Channel Enhancement Mode Field Effect TransistorFEATURES530V, 7A, RDS(ON) = 28m @VGS = 10V. RDS(ON) = 40m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired. D1 D1 D2 D28 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA = 25 C unl

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: SML30B40

 

 
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