CEM3258 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEM3258

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3 nS

Cossⓘ - Capacitancia de salida: 145 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm

Encapsulados: SO8

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CEM3258 datasheet

 ..1. Size:301K  cet
 cem3258.pdf pdf_icon

CEM3258

CEM3258 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V, 7A, RDS(ON) = 28m @VGS = 10V. RDS(ON) = 40m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D1 D1 D2 D2 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unl

 8.1. Size:610K  cet
 cem3259.pdf pdf_icon

CEM3258

CEM3259 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 5 30V, 7.6A, RDS(ON) = 22m @VGS = 10V. RDS(ON) = 33m @VGS = 4.5V. -30V, -5.9A, RDS(ON) = 36m @VGS = -10V. RDS(ON) = 52m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2 8 7 6 5 High power and current handing capability. Lead free product is acquired. Surfac

 8.2. Size:408K  cet
 cem3254.pdf pdf_icon

CEM3258

CEM3254 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V ,7.8A, RDS(ON) = 28m @VGS = 10V. RDS(ON) = 40m @VGS = 4.5V. D D D D Super high dense cell design for extremely low RDS(ON). 8 7 6 5 High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. 1 2 3 4 S S S G SO-8 1 ABSOLUTE MAXIMUM RATINGS TA = 25

 8.3. Size:390K  cet
 cem3252.pdf pdf_icon

CEM3258

CEM3252 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 7.5A, RDS(ON) = 28m @VGS = 10V. RDS(ON) = 40m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwis

MOSTRAR MÁS

Otros transistores... CES2336, CEM3128, CEM3138, CEM3172, CEM3178, CEM3252, CEM3252L, CEM3254, IRF2807, CEM3259, CEM4042, CEM4204, CEM4228, CEM4269, CEM4279, CEM4282, CEM4308