CEM3259 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CEM3259
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 7.6(5.9) A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 13 nC
Tiempo de subida (tr): 4(5) nS
Conductancia de drenaje-sustrato (Cd): 125(150) pF
Resistencia entre drenaje y fuente RDS(on): 0.022 Ohm
Paquete / Cubierta: SO8
Búsqueda de reemplazo de MOSFET CEM3259
CEM3259 Datasheet (PDF)
cem3259.pdf
CEM3259Dual Enhancement Mode Field Effect Transistor (N and P Channel)FEATURES530V, 7.6A, RDS(ON) = 22m @VGS = 10V. RDS(ON) = 33m @VGS = 4.5V.-30V, -5.9A, RDS(ON) = 36m @VGS = -10V. RDS(ON) = 52m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D28 7 6 5High power and current handing capability.Lead free product is acquired.Surfac
cem3254.pdf
CEM3254N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES30V ,7.8A, RDS(ON) = 28m @VGS = 10V. RDS(ON) = 40m @VGS = 4.5V.D D D DSuper high dense cell design for extremely low RDS(ON).8 7 6 5High power and current handing capability.Lead-free plating ; RoHS compliant.Surface mount Package.1 2 3 4 S S S GSO-81ABSOLUTE MAXIMUM RATINGS TA = 25
cem3258.pdf
CEM3258Dual N-Channel Enhancement Mode Field Effect TransistorFEATURES530V, 7A, RDS(ON) = 28m @VGS = 10V. RDS(ON) = 40m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired. D1 D1 D2 D28 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA = 25 C unl
cem3252.pdf
CEM3252N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 7.5A, RDS(ON) = 28m @VGS = 10V. RDS(ON) = 40m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwis
cem3252l.pdf
CEM3252LN-Channel Enhancement Mode Field Effect TransistorFEATURES530V, 8A, RDS(ON) = 29m @VGS = 10V. RDS(ON) = 36m @VGS = 4.5V. RDS(ON) = 55m @VGS = 2.5V.Super high dense cell design for extremely low RDS(ON).D D D DHigh power and current handing capability.8 7 6 5Lead free product is acquired.Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM
cem3252.pdf
CEM3252www.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO-
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