CEM4269 Todos los transistores

 

CEM4269 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CEM4269
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.1(5.2) A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10(5) nS
   Cossⓘ - Capacitancia de salida: 155(150) pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm
   Paquete / Cubierta: SO8
 

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CEM4269 Datasheet (PDF)

 ..1. Size:598K  cet
 cem4269.pdf pdf_icon

CEM4269

CEM4269Dual Enhancement Mode Field Effect Transistor (N and P Channel)FEATURES40V, 6.1A, RDS(ON) = 32m @VGS = 10V. RDS(ON) = 46m @VGS = 4.5V.-40V, -5.2A, RDS(ON) = 43m @VGS = 10V. RDS(ON) = 65m @VGS = 4.5V.D1 D1 D2 D2Super high dense cell design for extremely low RDS(ON).8 7 6 5High power and current handing capability.Lead free product is acquired.Surface mo

 9.1. Size:441K  cet
 cem4207.pdf pdf_icon

CEM4269

CEM4207P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-40V, -7A, RDS(ON) = 30m @VGS = -10V. RDS(ON) = 40m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead-free plating ; RoHS compliant.8 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS

 9.2. Size:737K  cet
 cem4282.pdf pdf_icon

CEM4269

CEM4282N-Channel Enhancement Mode Field Effect TransistorFEATURES540V, 6.6A, RDS(ON) = 36m @VGS = 10V. RDS(ON) = 48m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless other

 9.3. Size:489K  cet
 cem4279.pdf pdf_icon

CEM4269

CEM4279Dual Enhancement Mode Field Effect Transistor (N and P Channel)FEATURES540V, 6.1A, RDS(ON) = 32m @VGS = 10V. RDS(ON) = 46m @VGS = 4.5V.-40V, -4.3A, RDS(ON) = 66m @VGS = -10V. RDS(ON) = 105m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D28 7 6 5High power and current handing capability.Lead free product is acquired.Surfa

MOSTRAR MÁS

Otros transistores... CEM3252 , CEM3252L , CEM3254 , CEM3258 , CEM3259 , CEM4042 , CEM4204 , CEM4228 , AO3401 , CEM4279 , CEM4282 , CEM4308 , CEM6056 , CEM6086 , CEM6086L , CEM6088 , CEM6088L .

History: AM3428N | TSD5N60M | AM4924N | FC694601 | STD2NK70Z-1 | DMN313DLT | APT6015JVFR

 

 
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