Справочник MOSFET. CEM4269

 

CEM4269 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CEM4269
   Тип транзистора: MOSFET
   Полярность: NP
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6.1(5.2) A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 20.5 nC
   trⓘ - Время нарастания: 10(5) ns
   Cossⓘ - Выходная емкость: 155(150) pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.032 Ohm
   Тип корпуса: SO8

 Аналог (замена) для CEM4269

 

 

CEM4269 Datasheet (PDF)

 ..1. Size:598K  cet
 cem4269.pdf

CEM4269 CEM4269

CEM4269Dual Enhancement Mode Field Effect Transistor (N and P Channel)FEATURES40V, 6.1A, RDS(ON) = 32m @VGS = 10V. RDS(ON) = 46m @VGS = 4.5V.-40V, -5.2A, RDS(ON) = 43m @VGS = 10V. RDS(ON) = 65m @VGS = 4.5V.D1 D1 D2 D2Super high dense cell design for extremely low RDS(ON).8 7 6 5High power and current handing capability.Lead free product is acquired.Surface mo

 9.1. Size:441K  cet
 cem4207.pdf

CEM4269 CEM4269

CEM4207P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-40V, -7A, RDS(ON) = 30m @VGS = -10V. RDS(ON) = 40m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead-free plating ; RoHS compliant.8 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS

 9.2. Size:737K  cet
 cem4282.pdf

CEM4269 CEM4269

CEM4282N-Channel Enhancement Mode Field Effect TransistorFEATURES540V, 6.6A, RDS(ON) = 36m @VGS = 10V. RDS(ON) = 48m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless other

 9.3. Size:489K  cet
 cem4279.pdf

CEM4269 CEM4269

CEM4279Dual Enhancement Mode Field Effect Transistor (N and P Channel)FEATURES540V, 6.1A, RDS(ON) = 32m @VGS = 10V. RDS(ON) = 46m @VGS = 4.5V.-40V, -4.3A, RDS(ON) = 66m @VGS = -10V. RDS(ON) = 105m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D28 7 6 5High power and current handing capability.Lead free product is acquired.Surfa

 9.4. Size:104K  cet
 cem4228.pdf

CEM4269 CEM4269

CEM4228Dual N-Channel Enhancement Mode Field Effect TransistorFEATURES540V, 6.3A, RDS(ON) = 30m @VGS = 10V. RDS(ON) = 45m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA = 25 C

 9.5. Size:230K  cet
 cem4248.pdf

CEM4269 CEM4269

CEM4282N-Channel Enhancement Mode Field Effect TransistorFEATURES540V, 6.6A, RDS(ON) = 36m @VGS = 10V. RDS(ON) = 48m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless other

 9.6. Size:411K  cet
 cem4201.pdf

CEM4269 CEM4269

CEM4201P-Channel Enhancement Mode Field Effect TransistorFEATURES-40V, -7.5A, RDS(ON) = 28m @VGS = -10V. RDS(ON) = 38m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless othe

 9.7. Size:407K  cet
 cem4204.pdf

CEM4269 CEM4269

CEM4204N-Channel Enhancement Mode Field Effect TransistorFEATURES40V, 7.3A, RDS(ON) = 28m @VGS = 10V. RDS(ON) = 42m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwis

 9.8. Size:954K  cn vbsemi
 cem4228.pdf

CEM4269 CEM4269

CEM4228www.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channel

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top