CEM6056 Todos los transistores

 

CEM6056 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CEM6056
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 390 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0062 Ohm
   Paquete / Cubierta: SO8
     - Selección de transistores por parámetros

 

CEM6056 Datasheet (PDF)

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 cem6056.pdf pdf_icon

CEM6056

CEM6056N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES60V, 15A, RDS(ON) = 7.5 m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.D D D D8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter

 0.1. Size:648K  cet
 cem6056l.pdf pdf_icon

CEM6056

CEM6056LN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 14.5A, RDS(ON) = 7.8 m @VGS = 10V. RDS(ON) = 10 m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DRoHS compliant.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedP

 9.1. Size:399K  cet
 cem6088l.pdf pdf_icon

CEM6056

CEM6088LPRELIMINARYDual N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 9.0A, RDS(ON) = 14.5m @VGS = 10V. RDS(ON) = 18.0m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant. D1 D1 D2 D28 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM

 9.2. Size:407K  cet
 cem6086l.pdf pdf_icon

CEM6056

CEM6086LPRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 12A, RDS(ON) = 12m @VGS = 10V. RDS(ON) = 15m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C un

MOSTRAR MÁS

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: AONS36316 | 4N65KG-T60-K | RQK0608BQDQS | MRF5003 | STP5N62K3 | SSH6N80 | IRFR120TR

 

 
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