CEM6056 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEM6056

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 390 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0062 Ohm

Encapsulados: SO8

 Búsqueda de reemplazo de CEM6056 MOSFET

- Selecciónⓘ de transistores por parámetros

 

CEM6056 datasheet

 ..1. Size:418K  cet
 cem6056.pdf pdf_icon

CEM6056

CEM6056 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 15A, RDS(ON) = 7.5 m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D D D D 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter

 0.1. Size:648K  cet
 cem6056l.pdf pdf_icon

CEM6056

CEM6056L N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 14.5A, RDS(ON) = 7.8 m @VGS = 10V. RDS(ON) = 10 m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D RoHS compliant. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted P

 9.1. Size:399K  cet
 cem6088l.pdf pdf_icon

CEM6056

CEM6088L PRELIMINARY Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 9.0A, RDS(ON) = 14.5m @VGS = 10V. RDS(ON) = 18.0m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D1 D1 D2 D2 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM

 9.2. Size:407K  cet
 cem6086l.pdf pdf_icon

CEM6056

CEM6086L PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 12A, RDS(ON) = 12m @VGS = 10V. RDS(ON) = 15m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C un

MOSTRAR MÁS

Otros transistores... CEM3259, CEM4042, CEM4204, CEM4228, CEM4269, CEM4279, CEM4282, CEM4308, STP65NF06, CEM6086, CEM6086L, CEM6088, CEM6088L, CEM6186, CEM6188, CEM6426, CEM6428