CEM6056
MOSFET. Datasheet pdf. Equivalent
Type Designator: CEM6056
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 15
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 75
nC
trⓘ - Rise Time: 14
nS
Cossⓘ -
Output Capacitance: 390
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0062
Ohm
Package:
SO8
CEM6056
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CEM6056
Datasheet (PDF)
..1. Size:418K cet
cem6056.pdf 
CEM6056N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES60V, 15A, RDS(ON) = 7.5 m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.D D D D8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter
0.1. Size:648K cet
cem6056l.pdf
CEM6056LN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 14.5A, RDS(ON) = 7.8 m @VGS = 10V. RDS(ON) = 10 m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DRoHS compliant.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedP
9.1. Size:399K cet
cem6088l.pdf
CEM6088LPRELIMINARYDual N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 9.0A, RDS(ON) = 14.5m @VGS = 10V. RDS(ON) = 18.0m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant. D1 D1 D2 D28 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM
9.2. Size:407K cet
cem6086l.pdf
CEM6086LPRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 12A, RDS(ON) = 12m @VGS = 10V. RDS(ON) = 15m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C un
9.3. Size:399K cet
cem6088.pdf
CEM6088PRELIMINARYDual N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 9.5A, RDS(ON) = 12.5m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.D1 D1 D2 D2Surface mount Package.8 7 6 5SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwis
9.4. Size:407K cet
cem6086.pdf
CEM6086PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 12A, RDS(ON) = 11.5m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.D D D D8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter
Datasheet: WPB4002
, FDM15-06KC5
, FQD2N60CTM
, FDM47-06KC5
, FDPF045N10A
, FMD15-06KC5
, FDMS8672S
, FMD21-05QC
, IRFP250N
, FDMS86368F085
, FMD47-06KC5
, FDBL86361F085
, FMK75-01F
, FMM110-015X2F
, FMM150-0075X2F
, FMM22-05PF
, FMM22-06PF
.
