All MOSFET. CEM6056 Datasheet

 

CEM6056 Datasheet and Replacement


   Type Designator: CEM6056
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 75 nC
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 390 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
   Package: SO8
 

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CEM6056 Datasheet (PDF)

 ..1. Size:418K  cet
 cem6056.pdf pdf_icon

CEM6056

CEM6056N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES60V, 15A, RDS(ON) = 7.5 m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.D D D D8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter

 0.1. Size:648K  cet
 cem6056l.pdf pdf_icon

CEM6056

CEM6056LN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 14.5A, RDS(ON) = 7.8 m @VGS = 10V. RDS(ON) = 10 m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DRoHS compliant.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedP

 9.1. Size:399K  cet
 cem6088l.pdf pdf_icon

CEM6056

CEM6088LPRELIMINARYDual N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 9.0A, RDS(ON) = 14.5m @VGS = 10V. RDS(ON) = 18.0m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant. D1 D1 D2 D28 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM

 9.2. Size:407K  cet
 cem6086l.pdf pdf_icon

CEM6056

CEM6086LPRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 12A, RDS(ON) = 12m @VGS = 10V. RDS(ON) = 15m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C un

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History: MS65R170C

Keywords - CEM6056 MOSFET datasheet

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