CEM6086 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEM6086

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 245 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0115 Ohm

Encapsulados: SO8

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CEM6086 datasheet

 ..1. Size:407K  cet
 cem6086.pdf pdf_icon

CEM6086

CEM6086 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 12A, RDS(ON) = 11.5m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D D D D 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter

 0.1. Size:407K  cet
 cem6086l.pdf pdf_icon

CEM6086

CEM6086L PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 12A, RDS(ON) = 12m @VGS = 10V. RDS(ON) = 15m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C un

 8.1. Size:399K  cet
 cem6088l.pdf pdf_icon

CEM6086

CEM6088L PRELIMINARY Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 9.0A, RDS(ON) = 14.5m @VGS = 10V. RDS(ON) = 18.0m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D1 D1 D2 D2 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM

 8.2. Size:399K  cet
 cem6088.pdf pdf_icon

CEM6086

CEM6088 PRELIMINARY Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 9.5A, RDS(ON) = 12.5m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D1 D1 D2 D2 Surface mount Package. 8 7 6 5 SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwis

MOSTRAR MÁS

Otros transistores... CEM4042, CEM4204, CEM4228, CEM4269, CEM4279, CEM4282, CEM4308, CEM6056, IRF1405, CEM6086L, CEM6088, CEM6088L, CEM6186, CEM6188, CEM6426, CEM6428, CEM6600