CEM6086 Specs and Replacement

Type Designator: CEM6086

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 245 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm

Package: SO8

CEM6086 substitution

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CEM6086 datasheet

 ..1. Size:407K  cet
cem6086.pdf pdf_icon

CEM6086

CEM6086 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 12A, RDS(ON) = 11.5m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D D D D 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter... See More ⇒

 0.1. Size:407K  cet
cem6086l.pdf pdf_icon

CEM6086

CEM6086L PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 12A, RDS(ON) = 12m @VGS = 10V. RDS(ON) = 15m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C un... See More ⇒

 8.1. Size:399K  cet
cem6088l.pdf pdf_icon

CEM6086

CEM6088L PRELIMINARY Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 9.0A, RDS(ON) = 14.5m @VGS = 10V. RDS(ON) = 18.0m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D1 D1 D2 D2 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM... See More ⇒

 8.2. Size:399K  cet
cem6088.pdf pdf_icon

CEM6086

CEM6088 PRELIMINARY Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 9.5A, RDS(ON) = 12.5m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D1 D1 D2 D2 Surface mount Package. 8 7 6 5 SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwis... See More ⇒

Detailed specifications: CEM4042, CEM4204, CEM4228, CEM4269, CEM4279, CEM4282, CEM4308, CEM6056, IRF1405, CEM6086L, CEM6088, CEM6088L, CEM6186, CEM6188, CEM6426, CEM6428, CEM6600

Keywords - CEM6086 MOSFET specs

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