CEM6088 Todos los transistores

 

CEM6088 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CEM6088
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 220 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0125 Ohm
   Paquete / Cubierta: SO8

 Búsqueda de reemplazo de MOSFET CEM6088

 

CEM6088 Datasheet (PDF)

 ..1. Size:399K  cet
cem6088.pdf

CEM6088
CEM6088

CEM6088PRELIMINARYDual N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 9.5A, RDS(ON) = 12.5m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.D1 D1 D2 D2Surface mount Package.8 7 6 5SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwis

 0.1. Size:399K  cet
cem6088l.pdf

CEM6088
CEM6088

CEM6088LPRELIMINARYDual N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 9.0A, RDS(ON) = 14.5m @VGS = 10V. RDS(ON) = 18.0m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant. D1 D1 D2 D28 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM

 8.1. Size:407K  cet
cem6086l.pdf

CEM6088
CEM6088

CEM6086LPRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 12A, RDS(ON) = 12m @VGS = 10V. RDS(ON) = 15m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C un

 8.2. Size:407K  cet
cem6086.pdf

CEM6088
CEM6088

CEM6086PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 12A, RDS(ON) = 11.5m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.D D D D8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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