FDG315N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDG315N
   Código: .15
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 2.1 nC
   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm
   Paquete / Cubierta: SC70-6

Búsqueda de reemplazo de MOSFET FDG315N

FDG315N Datasheet (PDF)

..1. Size:81K fairchild semi
fdg315n.pdf

July 2000FDG315NN-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET is produced using 2 A, 30 V. RDS(ON) = 0.12 @ VGS = 10 VFairchild Semiconductor's advanced PowerTrench RDS(ON) = 0.16 @ VGS = 4.5 V.process that has been especially tailored to minimizeon-state resistance and yet maintain super

9.1. Size:80K fairchild semi
fdg313n d87z.pdf

July 2000FDG313NDigital FET, N-ChannelGeneral Description FeaturesThis N-Channel enhancement mode field effect 0.95 A, 25 V. RDS(on) = 0.45 @ VGS = 4.5 Vtransistor is produced using Fairchild's proprietary, highRDS(on) = 0.60 @ VGS = 2.7 V.cell density, DMOS technology. This very high densityprocess is especially tailored to minimize on-stateresistance. This devic

9.2. Size:89K fairchild semi
fdg311n.pdf

February 2000FDG311NN-Channel 2.5V Specified PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET is produced using Fairchild 1.9 A, 20 V. RDS(ON) = 0.115 @ VGS = 4.5 VSemiconductor's advanced PowerTrench process thatRDS(ON) = 0.150 @ VGS = 2.5 V.has been especially tailored to minimize the on-stateresistance and yet maintain lo

9.3. Size:82K fairchild semi
fdg313n.pdf

9.4. Size:79K fairchild semi
fdg312p.pdf

February 1999FDG312PP-Channel 2.5V Specified PowerTrench MOSFETGeneral DescriptionFeaturesThis P-Channel MOSFET is produced using Fairchild -1.2 A, -20 V. RDS(on) = 0.18 @ VGS = -4.5 VSemiconductor's advanced PowerTrench process thatRDS(on) = 0.25 @ VGS = -2.5 V.has been especially tailored to minimize the on-stateresistance and yet maintain low gate charge for

9.5. Size:70K fairchild semi
fdg316p.pdf

December 2001FDG316PP-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis P-Channel Logic Level MOSFET is produced using -1.6 A, -30 V. RDS(ON) = 0.19 @ VGS = -10 VFairchild Semiconductor's advanced PowerTrenchRDS(ON) = 0.30 @ VGS = -4.5 V.process that has been especially tailored to minimizeon-state resistance and yet maint

9.6. Size:84K fairchild semi
fdg314p.pdf

July 2000FDG314PDigital FET, P-ChannelGeneral Description FeaturesThis P-Channel enhancement mode field effect -0.65 A, -25 V. RDS(ON) = 1.1 @ VGS = -4.5 Vtransistor is produced using Fairchild SemiconductorsRDS(ON) = 1.5 @ VGS = -2.7 V.proprietary, high cell density, DMOS technology. Thisvery high density process is tailored to minimize on-state resistance at

9.7. Size:201K onsemi
fdg311n.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

9.8. Size:185K onsemi
fdg316p.pdf

Otros transistores... FDD6680 , FDD6680A , FDD6690A , AS3402 , FDG311N , FDG312P , FDG313N , FDG314P , AO3401 , FDG316P , FDG6301N , FDG6302P , FDG6303N , FDG6304P , FDN335N , FDN336P , FDN337N .

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