CEM6659 Todos los transistores

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 cem6659.pdf

CEM6659 Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY FEATURES 5 60V, 4.1A, RDS(ON) = 68m @VGS = 10V. RDS(ON) = 86m @VGS = 4.5V. -60V, -3.1A, RDS(ON) = 130m @VGS = -10V. RDS(ON) = 170m @VGS = -4.5V. D1 D1 D2 D2 Super high dense cell design for extremely low RDS(ON). 8 7 6 5 High power and current handing capability. Lead free product is a

 ..2. Size:931K  cn vbsemi
 cem6659.pdf

CEM6659 www.VBsemi.tw N- and P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFET N-Channel 60 6 nC 0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested 0.050 at VGS = - 10 V - 4.9 APPLICATIONS P-Channel - 60 8 nC 0.060 at VGS =

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 cem6600.pdf

CEM6600 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 4A, RDS(ON) = 76m @VGS = 10V. RDS(ON) = 100m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise

 9.2. Size:641K  cet
 cem6608.pdf

CEM6608 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 4A, RDS(ON) = 76m @VGS = 10V. RDS(ON) = 100m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unles

 9.3. Size:424K  cet
 cem6601.pdf

CEM6601 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -4A, RDS(ON) = 86m @VGS = -10V. RDS(ON) = 125m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless other

 9.4. Size:425K  cet
 cem6607.pdf

CEM6607 Dual P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -60V, -3.8A, RDS(ON) = 86m @VGS = -10V. RDS(ON) = 125m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATI

 9.5. Size:787K  cn vbsemi
 cem6601.pdf

CEM6601 www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -60 100 % Rg and UIS tested RDS(on) ( ) at VGS = -10 V 0.050 RDS(on) ( ) at VGS = -4.5 V 0.060 ID (A) per leg -8 S SO-8 S 1 8 D G S D 2 7 S 3 6 D G D 4 5 D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETE