CES2310 Todos los transistores

 

CES2310 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CES2310

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.3 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 12 V

Corriente continua de drenaje (Id): 4.8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 3 nS

Conductancia de drenaje-sustrato (Cd): 90 pF

Resistencia drenaje-fuente RDS(on): 0.034 Ohm

Empaquetado / Estuche: SOT23

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CES2310 Datasheet (PDF)

1.1. ces2310.pdf Size:1084K _cet

CES2310
CES2310

CES2310 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 4.8A, RDS(ON) = 34m? @VGS = 10V. RDS(ON) = 38m? @VGS = 4.5V. RDS(ON) = 50m? @VGS = 2.5V. RDS(ON) = 60m? @VGS = 1.8V. D High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless other

4.1. ces2313a.pdf Size:409K _cet

CES2310
CES2310

CES2313A P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -3.8A, RDS(ON) = 55m? @VGS = -10V. RDS(ON) = 86m? @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Volta

4.2. ces2314.pdf Size:139K _cet

CES2310
CES2310

CES2314 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 4A, RDS(ON) = 50m? @VGS = 10V. RDS(ON) = 70m? @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Lead free product is acquired. D Rugged and reliable. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS

 4.3. ces2316.pdf Size:141K _cet

CES2310
CES2310

CES2316 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 4.8A, RDS(ON) = 34m? @VGS = 10V. RDS(ON) = 50m? @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Lead free product is acquired. D Rugged and reliable. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VD

4.4. ces2317.pdf Size:390K _cet

CES2310
CES2310

CES2317 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -3.1A, RDS(ON) = 80m? @VGS = -10V. RDS(ON) = 90m? @VGS = -4.5V. RDS(ON) = 120m? @VGS = -2.5V. High dense cell design for extremely low RDS(ON). D Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Sy

 4.5. ces2312.pdf Size:275K _cet

CES2310
CES2310

CES2312 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 4.5A, RDS(ON) = 33m? @VGS = 4.5V. RDS(ON) = 40m? @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage V

4.6. ces2313.pdf Size:386K _cet

CES2310
CES2310

CES2313 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -3.6A, RDS(ON) = 60m? @VGS = -10V. RDS(ON) = 90m? @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltag

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