CES2310 Datasheet and Replacement
Type Designator: CES2310
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
Package: SOT23
CES2310 substitution
CES2310 Datasheet (PDF)
ces2310.pdf

CES2310N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 4.8A, RDS(ON) = 34m @VGS = 10V. RDS(ON) = 38m @VGS = 4.5V. RDS(ON) = 50m @VGS = 2.5V. RDS(ON) = 60m @VGS = 1.8V.DHigh dense cell design for extremely low RDS(ON).Rugged and reliable.Lead-free plating ; RoHS compliant.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C u
ces2317.pdf

CES2317P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -3.1A, RDS(ON) = 80m @VGS = -10V. RDS(ON) = 90m @VGS = -4.5V. RDS(ON) = 120m @VGS = -2.5V.High dense cell design for extremely low RDS(ON).DRugged and reliable.Lead-free plating ; RoHS compliant.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedPar
ces2316.pdf

CES2316N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 4.8A, RDS(ON) = 34m @VGS = 10V. RDS(ON) = 50m @VGS = 4.5V.High dense cell design for extremely low RDS(ON).Lead free product is acquired.DRugged and reliable.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Vol
ces2312.pdf

CES2312N-Channel Enhancement Mode Field Effect TransistorFEATURES20V, 4.5A, RDS(ON) = 33m @VGS = 4.5V. RDS(ON) = 40m @VGS = 2.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead free product is acquired.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Vo
Datasheet: CEM9436A , CEM9926A , CEM9935A , CEM9936A , CEN7002A , CES2302 , CES2306 , CES2308 , 50N06 , CES2312 , CES2314 , CES2316 , CES2320 , CES2324 , CES2342 , CES2362 , CET0215 .
History: STD9NM50N | IPB80N04S2-04 | SIHFB9N65A | SUM110N08-07P | IXTK20N150 | STW70N65M2 | IPW50R250CP
Keywords - CES2310 MOSFET datasheet
CES2310 cross reference
CES2310 equivalent finder
CES2310 lookup
CES2310 substitution
CES2310 replacement
History: STD9NM50N | IPB80N04S2-04 | SIHFB9N65A | SUM110N08-07P | IXTK20N150 | STW70N65M2 | IPW50R250CP



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