CES2320 Todos los transistores

 

CES2320 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CES2320

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.3 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 5.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 5 nS

Conductancia de drenaje-sustrato (Cd): 130 pF

Resistencia drenaje-fuente RDS(on): 0.029 Ohm

Empaquetado / Estuche: SOT23

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CES2320 Datasheet (PDF)

1.1. ces2320.pdf Size:383K _cet

CES2320
CES2320

CES2320 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 5.2A, RDS(ON) = 29m? (typ) @VGS = 10V. RDS(ON) = 45m? (typ) @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Lead free product is acquired. D Rugged and reliable. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Sourc

4.1. ces2321a.pdf Size:400K _cet

CES2320
CES2320

CES2321A PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -3.8A, RDS(ON) = 55m? @VGS = -4.5V. RDS(ON) = 62m? @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead-free plating ; RoHS compliant. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units

4.2. ces2321.pdf Size:378K _cet

CES2320
CES2320

CES2321 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -3.8A, RDS(ON) = 55m? @VGS = -4.5V. RDS(ON) = 62m? @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Volta

 4.3. ces2323.pdf Size:387K _cet

CES2320
CES2320

CES2323 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -4.2A, RDS(ON) = 48m? @VGS = -10V. RDS(ON) = 80m? @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltag

4.4. ces2324.pdf Size:453K _cet

CES2320
CES2320

CES2324 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 4.2A, RDS(ON) = 45m? @VGS = 4.5V. RDS(ON) = 80m? @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Lead free product is acquired. D Rugged and reliable. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage V

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